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MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
CR02AM
OUTLINE DRAWING
5.0 MAX 4.4
Dimensions in mm
2
VOLTAGE CLASS TYPE NAME
3 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL
CIRCUMSCRIBE CIRCLE 0.7
1.25 1.25
1.3
12.5 MIN
1
5.0 MAX
0.47 0.3 10 0.4 0.1 0.01 6 6 0.1 0.23
132
* IT (AV) ........................................................................ 0.3A * VDRM .................................................... 200V/300V/400V * IGT ......................................................................... 100A
JEDEC : TO-92
APPLICATION Solid state relay, leakage protector, fire alarm, timer, ringcounter, electric blankets, strobe flasher, other general purpose control applications
MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage
V1 V1
Voltage class 4 200 300 160 200 160 6 300 400 240 300 240 8 400 500 320 400 320
Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg --
Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing
Conditions Commercial frequency, sine half wave, 180 conduction, Ta=30C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings
Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value
-40 ~ +125 -40 ~ +125
V1. With Gate-to-cathode resistance RGK=1k
Feb.1999
3.9 MAX
Unit V V V V V Unit A A A A2s W W V V A C C g
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-a) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Test conditions Tj=125C, VRRM applied Tj=125C, VDRM applied, RGK=1k Ta=25C, ITM=0.6A, instantaneous value Ta=25C, VD=6V, IT=0.1A V3 Tj=125C, VD=1/2VDRM, RGK=1k Tj=25C, VD=6V, IT=0.1A V3 Tj=25C, VD=12V, RGK=1k Junction to ambient Limits Min. -- -- -- -- 0.2 1 -- -- Typ. -- -- -- -- -- -- -- -- Max. 0.1 0.1 1.6 0.8 -- 100 V2 3 180 Unit mA mA V V V A mA C/W
V2. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item IGT (A) A 1 ~ 30 B 20 ~ 50 C 40 ~ 100
The above values do not include the current flowing through the 1k resistance between the gate and cathode.
V3. IGT, VGT measurement circuit. A1 IGS 3V DC A3 IGT A2 TUT 6V DC 60
V1 RGK 12 VGT 1k SWITCH
SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1k)
PERFORMANCE CURVES
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
MAXIMUM ON-STATE CHARACTERISTICS 101 7 Ta = 25C 5 3 2 100 7 5 3 2 10-1 7 5 3 2 10-2 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT 10 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102
CONDUCTION TIME (CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS 102
7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE
100 (%)
GATE VOLTAGE (V)
GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C)
101
VFGM = 6V PG(AV) = 0.01W VGT = 0.8V
PGM = 0.1W
103 7 5 3 2 102 7 5 3 2 101 7 5 3 2
TYPICAL EXAMPLE
100
IGT = 100A (Tj = 25C) VGD = 0.2V IFGM = 0.1A
10-1
10-2 10-2 2 3 5 710-12 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT (mA)
100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)
GATE CURRENT VS. JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0
100 (%)
200 180 160 #1 #2
GATE TRIGGER VOLTAGE (V)
GATE CURRENT (Tj = tC) GATE CURRENT (Tj = 25C)
140 120 100 80 60 40 20
TYPICAL EXAMPLE IGT (25C) # 1 32A # 2 9A
0.9 0.8 0.7 0.6
0.5 0.4 0.3
See 3
0.2 0.1
,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,,
DISTRIBUTION
TYPICAL EXAMPLE
0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT)
0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
TRANSIENT THERMAL IMPEDANCE (C/W)
180 160 140 120 100 80 60 40 20 0 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 TIME (s)
AVERAGE POWER DISSIPATION (W)
200
100
23 5
7 101
23 5
7 102
23 5
7 103
MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 0.8 0.7 0.6 0.5 60 0.4 0.3 0.2 0.1 0 0 360 RESISTIVE, INDUCTIVE LOADS 0.4 0.1 0.2 0.3 = 30 90 120 180
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
140 120 100 80 60 40 20 0 0 = 30 60 90 120 0.1 0.2
AVERAGE POWER DISSIPATION (W)
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160
AMBIENT TEMPERATURE (C)
MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 0.8 0.7 0.6 90 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 = 30 60 120 180
360 RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION
180 0.3 0.4
360 RESISTIVE LOADS 0.5 0.3 0.4
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AVERAGE POWER DISSIPATION (W)
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160
AMBIENT TEMPERATURE (C)
MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 60 = 30 360 RESISTIVE, INDUCTIVE LOADS 0.5 0.3 0.4 90 180 120 DC 270
140 120 100 80 60 40 20 0 0 = 30 0.1 60 0.2
360 RESISTIVE LOADS NATURAL CONVECTION
120 90 180 0.3 0.4
0.5
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (C)
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 NATURAL CONVECTION 140 120 100 80 60 40 20 0 0 0.1 360 RESISTIVE, INDUCTIVE LOADS
BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE
100 (%)
160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE RGK = 1k
= 30 60 90 120 180 270 DC 0.2 0.3 0.4
0.5
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
100 (%)
120 100
TYPICAL EXAMPLE Tj = 125C
100 (%) BREAKOVER VOLTAGE (dv/dt = vV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )
BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE
BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 120 100 80 60 40 20 TYPICAL EXAMPLE # 1 IGT (25C)=10A # 2 IGT (25C)=66A Tj = 125C, RGK = 1k #2 #1
BREAKOVER VOLTAGE (RGK = rk) BREAKOVER VOLTAGE (RGK = 1k)
80 60 40 20 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (k)
0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/s)
HOLDING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2
HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE
100 (%)
500
HOLDING CURRENT (mA)
Tj = 25C IH (25C)=1mA IGT (25C)=25A
400
HOLDING CURRENT (RGK = rk) HOLDING CURRENT (RGK = 1k)
#1 300
TYPICAL EXAMPLE IGT (25C) IH (1k) # 1 13A 1.6mA # 2 59A 1.8mA
,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,,
TYPICAL EXAMPLE JUNCTION TEMPERATURE (C)
DISTRIBUTION
#2 200
100 Tj = 25C 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (k)
10-1 -60 -40 -20 0 20 40 60 80 100 120 140
100 (%)
REPETITIVE PEAK REVERSE VOLTAGE (Tj = tC) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25C)
REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
100 (%)
GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 Tj = 25C 101 100 2 3 4 5 7 101 2 3 4 5 7 102 TYPICAL EXAMPLE IGT (25C) # 1 10A #2 # 2 66A
#1
GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)
GATE CURRENT PULSE WIDTH (s)
Feb.1999

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